P-type

piː taɪp
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Translation of P-type into German

Adjective

electronics

TECH.
having positive charge carriers in a semiconductor
TECH.
P-Typ positiv Löcher-
  • The P-type material was used in the solar cell.Das P-Typ-Material wurde in der Solarzelle verwendet.
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Examples of P-type in a sentence

  • Engineers used P-type silicon in the circuit.
p-type
piː taɪp
Adjective

technology

TECH.
relating to semiconductor material with positive charge carriers
TECH.
p-Typ
  • The p-type silicon is used in solar cells..Das p-Typ Silizium wird in Solarzellen verwendet

Expressions with p-type: examples in English and translations in German

p-Typ-Halbleiter
The solar cell uses a p-type semiconductor layered with an n-type semiconductor.

Translations of "P-type" in Context ordered by category and frequency

vom p-Typ

P-type thermoelectric converting substance and method of manufacturing the same

Thermoelektrische Umwandlungssubstanz vom p-Typ und Herstellungsverfahren dafür

p-leitende

A process as claimed in any preceding Claim, wherein the dopant is a P-type impurity.

Verfahren nach einem der vorgehenden Ansprüche, bei welchem der Dotierstoff eine p-leitende Verunreinigung ist.

p-Typs

An implantable pulse generator in accordance with claim 4, wherein said third and fourth switches (516,518) are P-type FETs.

Implantierbarer Impulsgenerator nach Anspruch 4, wobei der dritte und der vierte Schalter (516,518) FETs des P-Typs sind.

p-leitenden

A lateral PIN diode according to claim 1, wherein said N-type, intrinsic, and P-type regions are co-planar.

Laterale pin-Diode nach Anspruch 1, wobei die n-leitenden, eigenleitenden und p-leitenden Zonen koplanar sind.

p-leitend

The memory cell of Claim 1, or 2, wherein said erase gate is P-type.

Speicherzelle nach Anspruch 1 oder 2, wobei das Löschgate p-leitend ist.

p-dotierten

Process of claim 10 in which the additional device is a bipolar transistor having a p-type doped base region.

Verfahren nach Anspruch 10, bei dem das zusätzliche Bauelement ein Bipolartransistor mit einer p-dotierten Basiszone ist.

Explore more translations and examples on Reverso Context

Other translations for P-type:

  • p-leitendes
  • p-

P-type: Examples and translations in context

Solar cell comprising multicrystalline silicon and method of texturing the surface of P-type multicrystalline silicon

Multikristalline Silizium enthaltende Solarzelle und Verfahren zum Texturieren der Oberfläche von multikristallinem Silizium vom P-Typ

A P-type thermoelectric material prepared from the complex oxide as defined in any one of claims 1 to 3.

Thermoelektrisches Material vom P-Typ, das aus einem komplexen Oxid gemäss mindestens einem der Ansprüche 1 bis 3 hergestellt ist.

An assembly according to claim 1, characterized in that the circumference of the structure is occupied by a P-type drive-in (19).

Anordnung nach Anspruch 1, dadurch gekennzeichnet, dass der Umfang des Gebildes von einer tiefen Diffusion (19) vom P-Typ eingenommen wird.

A thin film transistor according to claim 1 or claim 2, including boron for doping said diamond layer to produce a P-type semiconductive layer.

Dünnfilm-Transistor nach Anspruch 1 oder Anspruch 2, welcher Bor zum Dotieren der Diamantschicht unter Herstellung einer Halbleiterschicht des P-Typs einschließt.

A polycrystalline diamond material as claimed in any one of claims 10 to 12, wherein said polycrystalline diamond material is a P-type semiconductive material.

Polykristallines Diamantmaterial nach einem der Ansprüche 10 bis 12, wobei das polykristalline Diamantmaterial ein halbleitendes Material des P-Typs ist.

By arranging a P-type region 10, an electrically insulating layer 11, for.

Durch die Anordnung eines P-leitenden Gebietes 10, einer elektrisch isolierenden Schicht 11, z.

The method of any above claim wherein the polysilicon of step f) is of the P-type and the dopant of step h) is boron.

Verfahren nach irgendeinem der obigen Ansprüche, wobei das Polysilicium von Schritt f) p-leitend ist und der Dotierstoff von Schritt h) Bor ist.

The semiconductor device according to claim 1, characterized in that the diffused layer (5, 6, 7) is of a P-type.

Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet , daß die Diffusionsschicht (5, 6. 7) P-leitend ist.

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